Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect

ABSTRACT

A method of forming an abrupt junction device with a semiconductor substrate is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed on the gate dielectric. A sidewall spacer is formed on the semiconductor substrate adjacent the gate and the gate dielectric. A thickening layer is formed by selective epitaxial growth on the semiconductor substrate adjacent the sidewall spacer. Raised source/drain dopant implanted regions are formed in at least a portion of the thickening layer. Silicide layers are formed in at least a portion of the raised source/drain dopant implanted regions to form source/drain regions, beneath the silicide layers, that are enriched with dopant from the silicide layers. A dielectric layer is deposited over the silicide layers, and contacts are then formed in the dielectric layer to the silicide layers.

BACKGROUND

1. Technical Field

The present invention relates generally to semiconductor technology, andmore specifically to siliciding in semiconductor devices to form abruptjunctions by a silicide growth dopant snowplow effect.

2. Background Art

Integrated circuits are made up of hundreds to millions of individualcomponents. One common component is the semiconductor transistor. Themost common and important semiconductor technology presently used issilicon-based, and the most preferred silicon-based semiconductor deviceis a Metal Oxide Semiconductor (“MOS”) transistor.

The transistor contains a gate electrode (usually polysilicon) over agate dielectric, over a silicon substrate. The silicon substrate on bothsides of the polysilicon gate is doped by ion implantation of boron orphosphorus or other impurity atoms into the surface of the siliconsubstrate, thereby becoming conductive. These doped regions of thesilicon substrate are referred to as “shallow source/drain junctions”,which are separated by a channel region beneath the polysilicon gate.

A silicon oxide or silicon nitride spacer, referred to as a “sidewallspacer”, on the sides of the polysilicon gate allows deposition ofadditional doping to form more heavily doped regions of the shallowsource/drain junctions, which are called “deep source/drain junctions”.The shallow and deep source/drain junctions are collectively referred toas “S/D junctions”.

To complete the transistor, a silicon oxide dielectric layer isdeposited to cover the gate, the spacer, and the silicon substrate. Toprovide electrical connections for the transistor, openings are etchedin the silicon oxide dielectric layer to the polysilicon gate and theS/D junctions. The openings are filled with metal to form electricalcontacts. To complete the integrated circuits, the contacts areconnected to additional levels of wiring in additional levels ofdielectric material to the outside of the dielectric material.

As transistors have decreased in size, it has been found that theelectrical resistance between the metal contacts and the siliconsubstrate or the polysilicon has increased to the level where itnegatively impacts the performance of the transistors. To lower theelectrical resistance, a transition material is formed between the metalcontacts and the silicon substrate or the polysilicon. The besttransition materials have been found to be cobalt silicide (CoSi₂) andnickel silicide (NiSi₂).

The silicides are formed by first applying a thin layer of the cobalt(Co) or nickel (Ni) on the silicon substrate above the S/D junctions andthe polysilicon gates. The semiconductor wafer is subjected to one ormore annealing steps at temperatures below 800° C. and this causes thecobalt or nickel to selectively react with the silicon and thepolysilicon to form the metal silicide. The process is generallyreferred to as “siliciding”.

Transistors used in integrated circuits are accordingly made eversmaller as the complexity and packing density of those circuits continueto increase. Those transistors use p-n junctions, which are formed insemiconductor substrates by controlled introduction of one or more ofthe dopant species in selected areas. Modem, scaled down, highperformance devices require these junctions to be shallow and abrupt.

Such junctions, as they are formed by the ion implantation, have iondistribution patterns or profiles in the substrate that are determinedby the ion implantation parameters and the substrate properties. Suchion distributions have a finite (i.e., limited) sharpness or abruptnessat their edges. The abruptness is then dulled as the dopant undergoesthermal annealing to make it electrically active in the substrate. Suchlimited abruptness of the dopant profile, and in particular the limitedabruptness of the active portion of the dopant profile, poseslimitations on the scalability of such devices to very small sizes.

Various methods have been proposed to sharpen the activated dopantprofile at the source and drain junctions. These include solid-phaseepitaxial regrowth of a preamorphized part of the doped area, as well asshallow and rapid melting of that area by lasers. In both cases,achieved active dopant profiles at the junction can become sharper thanthe profiles as originally implanted. However, these are complexprocesses with inherent limitations, and have not fully met the need forbetter and improved solutions.

Solutions to such problems have been long sought but prior developmentshave not taught or suggested solutions and, thus, solutions to theseproblems have long eluded those skilled in the art.

DISCLOSURE OF THE INVENTION

The present invention provides devices having abrupt junctions, and amethod for the formation thereof. A gate dielectric is formed on asemiconductor substrate, and a gate is formed on the gate dielectric. Asidewall spacer is formed on the semiconductor substrate adjacent thegate and the gate dielectric. A thickening layer is formed by selectiveepitaxial growth on the semiconductor substrate adjacent the sidewallspacer. Raised source/drain dopant implanted regions are formed in atleast a portion of the thickening layer. Silicide layers are formed inat least a portion of the raised source/drain dopant implanted regionsto form source/drain regions, beneath the silicide layers, that areenriched with dopant from the silicide layers. A dielectric layer isdeposited over the silicide layers, and contacts are then formed in thedielectric layer to the silicide layers. The method thus furnishes ahighly efficient and economical ion implantation and siliciding methodfor the formation of abrupt, shallow, high concentration integratedcircuit source and drain junctions.

Certain embodiments of the invention have other advantages in additionto or in place of those mentioned above. The advantages will becomeapparent to those skilled in the art from a reading of the followingdetailed description when taken with reference to the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view of a transistor in an intermediate stage of fabricationin accordance with the present invention;

FIG. 2 is the structure of FIG. 1 after deposition and etching to form asidewall spacer;

FIG. 3 is the structure of FIG. 2 following formation of a thickeninglayer on the surface of the semiconductor substrate;

FIG. 4 is the structure of FIG. 3 during formation of raisedsource/drain dopant implanted regions in the thickening layer and theadjacent top of the semiconductor substrate;

FIG. 5 is the structure of FIG. 4 during formation of metallic layers onthe gate and the raised source/drain dopant implanted regions;

FIG. 6 is the structure of FIG. 5 during the formation of silicidelayers;

FIG. 7 is a graphical representation of the profile of the dopantconcentration as originally implanted;

FIG. 8 is a graphical representation of the profile of the dopantconcentration following formation of the silicide layers and thesource/drain regions;

FIG. 9 is the structure of FIG. 6 after deposition of a dielectric layerover the silicide and the sidewall spacer;

FIG. 10 is the structure of FIG. 9 after formation of metal contacts;and

FIG. 11 is a simplified flow chart of the method of forming a device inaccordance with the present invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following description, numerous specific details are given toprovide a thorough understanding of the invention. However, it will beapparent to one skilled in the art that the invention may be practicedwithout these specific details. In order to avoid obscuring the presentinvention, some well-known configurations and process steps are notdisclosed in detail. In addition, the drawings showing embodiments ofthe apparatus are semi-diagrammatic and not to scale and, particularly,some of the dimensions are for the clarity of presentation and may beexaggerated in the drawing FIGs. The same numbers are used in all thedrawing FIGs. to relate to the same elements.

The term “horizontal” as used herein is defined as a plane parallel to asubstrate or wafer. The term “vertical” refers to a directionperpendicular to the horizontal as just defined. Terms, such as “on”,“above”, “below”, “bottom”, “top”, “side” (as in “sidewall”), “higher”,“lower”, “over”, and “under”, are defined with respect to the horizontalplane.

In the formation of integrated circuit devices, the source/drain (“S/D”)junctions of scaled devices are very shallow. They therefore need tohave very steep dopant profiles to enable high performance. As taughtherein, it has been discovered that dopant profiles can be generatedthat are steeper than the profiles of the originally implanted dopants.

As taught by the present invention, dopant rejection from growingsilicide is employed to steepen the dopant profiles. More specifically,silicide is grown into the silicon in S/D junction implanted regions. Asthe silicide grows into the silicon, the silicide rejects the dopant inthe silicon and pushes the dopant along in front of the silicide. Therejection of the dopant is due to the limited solid solubility ofdopants in suicides, and to the related segregation thereof at thesilicide-silicon interface.

In one embodiment, the transistor is formed with S/D regions that arefirst thickened by selective epitaxial growth (“SEG” or “epi”). S/Dregions are then formed in the thickened S/D regions by implanting themwith a desired initial concentration of dopant; e.g., arsenic (As) orboron (B). Part of the dopant is then snowplowed by growing silicide;e.g., cobalt silicide (CoSi₂) or nickel silicide (NiSi) on top of theepi layer. As the silicide grows downwardly into the silicon, it injectsexcess dopant into the silicon in front of it.

Referring now to FIG. 1, therein is shown a semiconductor device, and inparticular a transistor 100 in an intermediate stage of fabrication inaccordance with the present invention.

To form the intermediate stage, a gate dielectric layer, such as siliconoxide, and a conductive gate layer, such as polysilicon, have beendeposited on a semiconductor substrate 102 of a material such assilicon. The layers are patterned and etched to form a gate dielectric104 and a gate 106.

Referring now to FIG. 2, therein is shown the structure of FIG. 1 afterdeposition and etching of a sidewall spacer layer, typically of siliconnitride, to form a sidewall spacer 200. The sidewall spacer 200 preventsthe epi (see next paragraph) from shorting the S/D regions 606 and 608(see FIG. 6) and the gate 106. As can be seen, the sidewall spacer 200is quite thin, to allow the S/D regions 606 and 608 to be very close tothe edge of the gate 106 (as illustrated in FIG. 6).

Referring now to FIG. 3, therein is shown the structure of FIG. 2following formation by SEG of a thickening layer 300 on the surface ofthe semiconductor substrate 102 adjacent the sidewall spacer 200 and thegate 106. The thickening layer 300 raises the level or height of thesurface of the semiconductor substrate adjacent the sidewall spacer 200and the gate 106, providing for the formation of raised structuresthereadjacent.

Referring now to FIG. 4, therein is shown the structure of FIG. 3 duringa dopant ion implantation 400 to form such a raised structure. Inparticular, the dopant ion implantation 400 forms raised S/D dopantimplanted regions 402 and 404 in the thickening layer 300 (FIG. 3) andthe adjacent top of the semiconductor substrate 102. The gate 106 andthe sidewall spacer 200 act as masks for the formation of the raised S/Ddopant implanted regions 402 and 404. The dopant ion implantation 400 isthen followed by a high-temperature anneal (e.g., above 700° C.) toactivate the implanted impurity atoms in the raised S/D dopant implantedregions 402 and 404.

Dopants that may be used for the raised S/D dopant implanted regions 402and 404 include: arsenic (As), phosphorus (P), and antimony (Sb) forNMOS devices, and boron (B) and indium (In) for PMOS devices.

Referring now to FIG. 5, therein is shown a deposition process 500 thatforms a metallic layer 502 on the gate 106 and on the raised S/D dopantimplanted regions 402 and 404, respectively. For example, and asappropriate for the choice of dopants, the metallic layer 502 may beformed of cobalt (Co), nickel (Ni), titanium (Ti), hafnium (Hf), orplatinum (Pt).

Referring now to FIG. 6, therein is shown the formation of silicidelayers 600, 602, and 604 in accordance with the present invention. Thesilicide layers 600, 602, and 604 are formed by thermal silicidation ofthe metallic layer 502 (FIG. 5) into the silicon material of the gate106 and the raised S/D dopant implanted regions 402 (FIG. 5) and 404(FIG. 5), respectively. After the thermal silicidation anneal, anyresidual metal remaining from the metallic layer 502 is etched away inconventional manner.

As the silicide grows downwardly into the raised S/D dopant implantedregions 402 and 404, it injects excess dopant from the prior dopant ionimplantation 400 (FIG. 4) into the silicon in front of the downwardlygrowing silicide layers 602 and 604. This occurs because the solubilityof the dopant in silicide is far less than the solubility of the dopantin silicon. As a result, the remaining portions of the S/D dopantimplanted regions 402 and 404, beneath the silicide layers 602 and 604,become highly enriched with the dopant. These remaining portions of theS/D dopant implanted regions 402 and 404, beneath the silicide layers602 and 604, then become respective S/D regions 606 and 608 for thetransistor 100.

The S/D regions 606 and 608 have the virtue not only of being highlyenriched with dopant from the silicide layers, but also of being veryshallow. Accordingly, they present an abrupt, very steep dopant profile,steeper than the profile of the dopant as it was originally implantedand annealed, and similarly steeper than the profile of dopant thatlacks enrichment from the silicide layers. This steeper dopant profileis the dopant profile that is needed to enable high performance inshallow, scaled devices.

Referring now to FIG. 7, therein is shown a graphical representation ofthe profile 700 of the dopant concentration as it was originallyimplanted and annealed in the raised S/D dopant implanted regions 402and 404. As will be conventionally understood, the vertical axis(labeled “conc”) represents the dopant concentration, while thehorizontal axis (labeled “d”) represents the depth below the surface ofthe raised S/D dopant implanted regions 402 and 404.

Referring now to FIG. 8, therein is shown a graphical representation,similar to FIG. 7, of the profile 800 of the dopant concentrationfollowing the formation of the silicide layers 602 and 604, and the S/Dregions 606 and 608.

In one embodiment, the silicidation described in connection with FIG. 6is performed at a low enough temperature that the dopant segregation orplowing effect into the S/D regions 606 and 608 dominates any dopantdiffusion within the silicon of the S/D regions 606 and 608 themselves.This preserves and sharpens the dopant profile in the S/D regions 606and 608. In fact, by keeping the silicidation temperature sufficientlylow, dopant diffusion within the S/D regions and the adjacent siliconsubstrate can be kept essentially non-existent.

The epi deposition of the thickening layer 300 (FIG. 3) allows thesilicide layers 602 (FIG. 6) and 604 (FIG. 6) to be much thicker,thereby lessening parasitic S/D resistance. Accordingly, the epideposition should preferably be as thick as possible to produce acorrespondingly thick silicide. On the other hand, the epi depositioncannot be too thick or it may create excessive capacitance with the gate106.

It is believed that an advantage of the present invention is that, asthe silicide grows, it may inject more than just excess dopant into thesilicon in front of it. It may also inject vacancies into the silicon infront of it that improve the chances of dopant ending up insubstitutional sites of the silicon lattice, and thus becomingactivated. Consequently, not only is a steeper and richer dopant profileobtained, but the dopant activation may also be more complete.

Referring now to FIG. 9, therein is shown the structure of FIG. 6 afterdeposition of a dielectric layer 900 over the silicide layers 600, 602,and 604, and the sidewall spacer 200. The dielectric layer 900 isdeposited in known fashion and may consist, for example, of anappropriate known material having a dielectric constant suitable for theapplication at hand.

Referring now to FIG. 10, therein is shown the structure of FIG. 9 afterformation of metal contacts 1000, 1002, and 1004. The metal contacts1000, 1002, and 1004 are respectively electrically connected to thesilicide layers 600, 602, and 604, and respectively to the gate 106 andthe S/D regions 606 and 608.

In various embodiments, the metal contacts 1000, 1002, and 1004 are ofmetals such as tantalum (Ta), titanium (Ti), tungsten (W), alloysthereof, and compounds thereof. In other embodiments, the metal contacts1000, 1002, and 1004 are of metals such as copper (Cu), gold (Au),silver (Ag), alloys thereof, compounds thereof, and combinations thereofwith one or more of the above elements with diffusion barriers aroundthem.

Referring now to FIG. 11, therein is shown a simplified flow chart of amethod 1100 in accordance with the present invention. The method 1100includes: providing a semiconductor substrate in a step 1102; forming agate dielectric on the semiconductor substrate in a step 1104; forming agate on the gate dielectric in a step 1106; forming a sidewall spacer onthe semiconductor substrate adjacent the gate and the gate dielectric ina step 1108; forming a thickening layer by selective epitaxial growth onthe semiconductor substrate adjacent the sidewall spacer in a step 1110;forming raised source/drain dopant implanted regions in at least aportion of the thickening layer in a step 1112; forming silicide layersin at least a portion of the raised source/drain dopant implantedregions to form source/drain regions, beneath the silicide layers, thatare enriched with dopant from the silicide layers in a step 1114;depositing a dielectric layer over the silicide layers in a step 1116;and forming contacts in the dielectric layer to the silicide layers in astep 1118.

It has thus been discovered that the present invention provides numerousadvantages. For example, it furnishes a highly efficient and economicalion implantation and siliciding method for the formation of abrupt,shallow, high concentration integrated circuit source and drainjunctions.

Another advantage is that, as the silicide grows and injects excessdopant into the silicon in front of it, it may also inject vacanciesthat may improve the chances that the dopant will end up insubstitutional sites of the silicon lattice and become activated.

Thus, it has been discovered that the method and resulting structures ofthe present invention furnish important and heretofore unavailablesolutions, capabilities, and functional advantages for forming abruptjunctions in integrated circuit devices by using a silicide growthdopant snowplow effect.

While the invention has been described in conjunction with a specificbest mode, it is to be understood that many alternatives, modifications,and variations will be apparent to those skilled in the art in light ofthe aforegoing description. Accordingly, it is intended to embrace allsuch alternatives, modifications, and variations which fall within thescope of the included claims. All matters hithertofore set forth hereinor shown in the accompanying drawings are to be interpreted in anillustrative and non-limiting sense.

1. A method of forming a device comprising: providing a semiconductorsubstrate; forming a gate dielectric on the semiconductor substrate;forming a gate on the gate dielectric; forming a sidewall spacer on thesemiconductor substrate adjacent the gate and the gate dielectric;forming a thickening layer by selective epitaxial growth on thesemiconductor substrate adjacent the sidewall spacer; forming raisedsource/drain dopant implanted regions in at least a portion of thethickening layer; forming silicide layers in at least a portion of theraised source/drain dopant implanted regions to form source/drainregions, beneath the silicide layers, that are enriched with dopant fromthe silicide layers; depositing a dielectric layer over the silicidelayers; and forming contacts in the dielectric layer to the silicidelayers.
 2. The method as claimed in claim 1 wherein forming the raisedsource/drain dopant implanted regions further comprises implantingdopant into the thickening layer and the adjacent top of thesemiconductor substrate.
 3. The method as claimed in claim 1 whereinforming silicide layers in the raised source/drain dopant implantedregions further comprises: depositing metallic layers on the raisedsource/drain dopant implanted regions; and forming silicide layers bythermal silicidation of the metallic layers into the material of theraised source/drain dopant implanted regions.
 4. The method as claimedin claim 1 wherein forming silicide layers in the raised source/draindopant implanted regions to form source/drain regions therebeneath thatare enriched with dopant from the silicide layers further comprisesforming source/drain regions that are enriched with a dopant profilethat is steeper than the profile of the dopant as it was originallyimplanted.
 5. The method as claimed in claim 1 wherein forming raisedsource/drain dopant implanted regions further comprises implanting theregions with a dopant selected from a group consisting of arsenic,phosphorus, antimony, boron, indium, and a combination thereof.
 6. Themethod as claimed in claim 1 wherein forming silicide layers furthercomprises depositing a metallic layer selected from a group consistingof cobalt, nickel, titanium, hafnium, platinum, and a combinationthereof.
 7. A method of forming a device comprising: providing asemiconductor substrate; forming a gate dielectric on the semiconductorsubstrate; forming a gate on the gate dielectric; forming a sidewallspacer on the semiconductor substrate adjacent the gate and the gatedielectric; forming a thickening layer by selective epitaxial growth ofsilicon on the surface of the semiconductor substrate adjacent thesidewall spacer and the gate; forming raised source/drain dopantimplanted regions in at least a portion of the thickening layer and theadjacent top of the semiconductor substrate; forming silicide layers inat least a portion of the raised source/drain dopant implanted regionsto form source/drain regions, beneath the silicide layers, that areenriched with dopant from the silicide layers; forming a silicide layeron the gate; depositing a dielectric layer over the silicide layers; andforming contacts in the dielectric layer to the silicide layers.
 8. Themethod as claimed in claim 7 wherein forming the raised source/draindopant implanted regions further comprises implanting dopant into thethickening layer and the adjacent top of the semiconductor substrate. 9.The method as claimed in claim 7 wherein forming silicide layers in theraised source/drain dopant implanted regions further comprises:depositing metallic layers on the raised source/drain dopant implantedregions; and forming silicide layers by thermal silicidation of themetallic layers into the silicon material of the raised source/draindopant implanted regions.
 10. The method as claimed in claim 7 whereinforming silicide layers in the raised source/drain dopant implantedregions to form source/drain regions therebeneath that are enriched withdopant from the silicide layers further comprises forming source/drainregions that are enriched with a dopant profile that is steeper than theprofile of the dopant as it was originally implanted.
 11. The method asclaimed in claim 7 wherein forming raised source/drain dopant implantedregions further comprises implanting the regions with a dopant selectedfrom a group consisting of arsenic, phosphorus, antimony, boron, indium,and a combination thereof.
 12. The method as claimed in claim 7 whereinforming silicide layers further comprises depositing a metallic layerselected from a group consisting of cobalt, nickel, titanium, hafnium,platinum, and a combination thereof.
 13. A device comprising: asemiconductor substrate; a gate dielectric on the semiconductorsubstrate; a gate on the gate dielectric; a sidewall spacer on thesemiconductor substrate adjacent the gate and the gate dielectric; anepitaxial thickening layer on the semiconductor substrate adjacent thesidewall spacer; silicide layers in at least a portion of the epitaxialthickening layer; source/drain regions, beneath the silicide layers,that are enriched with dopant from the silicide layers; a dielectriclayer over the silicide layers; and contacts in the dielectric layer tothe silicide layers.
 14. The device as claimed in claim 13 wherein theepitaxial thickening layer and the adjacent top of the semiconductorsubstrate are dopant implanted regions.
 15. The device as claimed inclaim 13 wherein the silicide layers in the epitaxial thickening layerfurther comprise silicide layers formed by thermal silicidation ofdeposited metallic layers into a dopant implanted epitaxial thickeninglayer.
 16. The device as claimed in claim 13 wherein the source/drainregions that are enriched with dopant from the silicide layers have adopant profile that is steeper than the profile of dopant lackingenrichment from the silicide layers.
 17. The device as claimed in claim13 wherein the dopant is a material selected from a group consisting ofarsenic, phosphorus, antimony, boron, indium, and a combination thereof.18. The device as claimed in claim 13 wherein the silicide layers are asilicide of a metal selected from a group consisting of cobalt, nickel,titanium, hafnium, platinum, and a combination thereof.
 19. A devicecomprising: a semiconductor substrate; a gate dielectric on thesemiconductor substrate; a gate on the gate dielectric; a sidewallspacer on the semiconductor substrate adjacent the gate and the gatedielectric; an epitaxial silicon thickening layer on the surface of thesemiconductor substrate adjacent the sidewall spacer and the gate, theepitaxial thickening layer and the adjacent top of the semiconductorsubstrate being dopant implanted regions; silicide layers in at least aportion of the epitaxial silicon thickening layer; source/drain regions,beneath the silicide layers, that are enriched with dopant, from thesilicide layers, that has a dopant profile that is steeper than theprofile of dopant lacking enrichment from the silicide layers; thedopant being a material selected from a group consisting of arsenic,phosphorus, antimony, boron, indium, and a combination thereof; asilicide layer on the gate; the silicide layers being a silicide of ametal selected from a group consisting of cobalt, nickel, titanium,hafnium, platinum, and a combination thereof; a dielectric layer overthe silicide layers; and contacts in the dielectric layer to thesilicide layers.
 20. The device as claimed in claim 19 wherein thesilicide layers in the epitaxial silicon thickening layer furthercomprise silicide layers formed by thermal silicidation of depositedmetallic layers into a dopant implanted epitaxial silicon thickeninglayer.